Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes

In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12 identical Au/DLC/p-Si metal-interlayer-semiconductor (MIS) Schottky diodes. Current-voltage (I-V) measurements were carried out to obtain diodes' parameters. The rectification ratios of the MIS diodes were found between 103 and 104. By using the forward bias I-V characteristics, the average ideality factor (n) and barrier height (?b) values of Au/DLC/p-Si MIS structures were found as 2.06 and 0.84 eV, respectively. The ?b value of 0.84 eV obtained for Au/DLC/p-Si MIS diode was much higher than the value of 0.34 of conventional Au/p-Si Schottky diode. Cheung-Cheung functions were also used to extract barrier height and series resistance values and the obtained results were compared with I-V method. I-V measurements were also carried out under the hydrostatic pressure in the range of 0.0-2.0 kbar. It was found that barrier height and series resistance values were highly pressure sensitive and increased with the ascending pressure. It was proposed that Au/DLC/p-Si Schottky MIS diode can be used as pressure sensor due to high sensitivity to changing pressure. © 2015 Elsevier B.V. All rights reserved.

Yazar Basman N.
Aslan N.
Uzun O.
Cankaya G.
Kolemen U.
Yayın Türü Article
Tek Biçim Adres https://hdl.handle.net/20.500.12628/5578
Tek Biçim Adres 10.1016/j.mee.2015.05.001
Konu Başlıkları Diamond-like carbon
MIS Schottky diode
Pressure sensor
Koleksiyonlar Araştırma Çıktıları | WoS | Scopus | TR-Dizin | PubMed | SOBİAD
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu
Dergi Adı Microelectronic Engineering
Dergi Cilt Bilgisi 140
Sayfalar 18 - 22
Yayın Yılı 2015
Eser Adı
[dc.title]
Electrical characterization of metal/diamond-like carbon/inorganic semiconductor MIS Schottky barrier diodes
Yazar
[dc.contributor.author]
Basman N.
Yazar
[dc.contributor.author]
Aslan N.
Yazar
[dc.contributor.author]
Uzun O.
Yazar
[dc.contributor.author]
Cankaya G.
Yazar
[dc.contributor.author]
Kolemen U.
Yayın Yılı
[dc.date.issued]
2015
Yayıncı
[dc.publisher]
Elsevier
Yayın Türü
[dc.type]
article
Özet
[dc.description.abstract]
In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12 identical Au/DLC/p-Si metal-interlayer-semiconductor (MIS) Schottky diodes. Current-voltage (I-V) measurements were carried out to obtain diodes' parameters. The rectification ratios of the MIS diodes were found between 103 and 104. By using the forward bias I-V characteristics, the average ideality factor (n) and barrier height (?b) values of Au/DLC/p-Si MIS structures were found as 2.06 and 0.84 eV, respectively. The ?b value of 0.84 eV obtained for Au/DLC/p-Si MIS diode was much higher than the value of 0.34 of conventional Au/p-Si Schottky diode. Cheung-Cheung functions were also used to extract barrier height and series resistance values and the obtained results were compared with I-V method. I-V measurements were also carried out under the hydrostatic pressure in the range of 0.0-2.0 kbar. It was found that barrier height and series resistance values were highly pressure sensitive and increased with the ascending pressure. It was proposed that Au/DLC/p-Si Schottky MIS diode can be used as pressure sensor due to high sensitivity to changing pressure. © 2015 Elsevier B.V. All rights reserved.
Kayıt Giriş Tarihi
[dc.date.accessioned]
2019-12-23
Açık Erişim Tarihi
[dc.date.available]
2019-12-23
Yayın Dili
[dc.language.iso]
eng
Konu Başlıkları
[dc.subject]
Diamond-like carbon
Konu Başlıkları
[dc.subject]
MIS Schottky diode
Konu Başlıkları
[dc.subject]
Pressure sensor
Haklar
[dc.rights]
info:eu-repo/semantics/closedAccess
ISSN
[dc.identifier.issn]
0167-9317
İlk Sayfa Sayısı
[dc.identifier.startpage]
18
Son Sayfa Sayısı
[dc.identifier.endpage]
22
Dergi Adı
[dc.relation.journal]
Microelectronic Engineering
Dergi Cilt Bilgisi
[dc.identifier.volume]
140
Tek Biçim Adres
[dc.identifier.uri]
https://dx.doi.org/10.1016/j.mee.2015.05.001
Tek Biçim Adres
[dc.identifier.uri]
https://hdl.handle.net/20.500.12628/5578
Görüntülenme Sayısı ( Şehir )
Görüntülenme Sayısı ( Ülke )
Görüntülenme Sayısı ( Zaman Dağılımı )
Görüntülenme
10
09.12.2022 tarihinden bu yana
İndirme
1
09.12.2022 tarihinden bu yana
Son Erişim Tarihi
06 Şubat 2024 17:15
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Tıklayınız
pressure Au/DLC/p-Si height values diodes Schottky barrier obtained carried measurements series resistance hydrostatic compared method results extract functions reserved rights Elsevier changing sensitivity sensor proposed ascending Au/p-Si increased sensitive highly Cheung-Cheung conventional metal-interlayer-semiconductor ratios rectification
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